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规格: Specification:
电压/Voltage 1.8V,3.3V
温度/Temperature -40℃ — 85℃ / 105℃
容量/Density 512Mb/1Gb / 2Gb / 4Gb
封装/Package WSON 8*6,BGA 24
速度/Speed 83MHz,104MHz

SPI NAND Flash

单芯片设计的串行通信方案,引脚少、封装尺寸小,且在同一颗粒上集成了存储阵列和控制器 ,并带有内部ECC模块,使其在满足数据传输效率的同时,既节约了空间,又提升了稳定性。产品现拥有38nm及2xnm的成熟工艺制程,未来将继续研发1xnm先进工艺制程。产品可提供3.3V /1.8V两种电压,具备WSON、BGA多种封装形式,不仅能满足常规应用场景,也使其在目前日益普及的由电池驱动的移动互联网及物联网设备中保持低功耗,有效延长设备的待机时间,也更灵活地适用于不同应用场景。目前,东芯半导体的SPI NAND Flash 已在第七届中国电子信息博览会中获得创新奖及2019年度最佳国产存储芯片产品奖。

Dosilicon's SPI NAND Flash is a serial peripheral interface SLC NAND Flash which the memory array and controller are integrated on one cell, with an internal ECC module. It not only offers satisfactory data transmission efficiency, but also saves space and enhances stability. It now incorporates 38 nm and 2x nm process technology, and will keep developing 1x nm process in the future. SPI NAND Flash is suitable for two voltages, and comprises several packages, which are applicable to varied application scenarios. Dosilicon's SPI NAND Flash won the Innovation Award at the 7th China Electronic Information Expo and the Best Domestic Memory Chip Award 2019.

规格: Specification:
电压/Voltage 1.8V,3.3V
温度/Temperature -40℃—85℃/105℃
容量/Density 1Gb / 2Gb / 4Gb/ 8Gb
封装/Package TSOP48,VFBGA63,
VFBGA67
速度/Speed 20ns/25ns,30ns/45ns
线宽/Width *8/ *16

PPI NAND Flash

兼容传统的并行接口标准,高可靠性。可提供容量从1Gb到8Gb, 3.3V/1.8V两种电压,多种封装方式的产品,以满足不同应用场景。在网络通信,智能音箱,安防监控,机顶盒等领域中广泛应用。

Dosilicon's PPI NAND Flash is designed with traditional parallel peripheral interface with high reliability. It provides capacities from 1Gb to 8Gb, two voltages (3.3V / 1.8V) and different package types compatible with various application scenarios. It is widely used in many fields such as network communication, AI speaker, security monitoring, STB, etc

规格: Specification:
电压/Voltage 1.8V,3.3V
温度/Temperature -40℃ — 85℃ — 105℃
容量/Density 32Mb/64Mb/128Mb/256Mb/512Mb
封装/Package SOP,WSON,VSOP,BGA,WLCSP
速度/Speed 104MHz/133MHz

SPI NOR Flash

可提供通用SPI接口、不同规格的NOR Flash,容量从32Mb到512Mb,3.3V/1.8V两种电压,支持Single/Dual/Quad SPI和QPI四种指令模式、DTR传输模式和多种封装方式。产品专注在中小容量,可广泛应用于各种应用场景。

Dosilicon's SPI NOR Flash is of different specifications with universal SPI interfaces, which has capacities from 32 Mb to 512 Mb, two voltages (3.3V / 1.8V), Single / Dual / Quad SPI /QPI instruction modes, DTR transmission mode and several types of package. It focuses on medium and small capacity, which is suitable for different application scenarios.

规格: Specification:
电压/Voltage 1.5V,1.35V
温度/Temperature 0℃/-40℃ — 95℃
容量/Density 1Gb / 2Gb / 4Gb
封装/Package FBGA 78,FBGA 96
速度/Speed 800MHz,933MHz
线宽/Width *8/ *16

DDR3(L)

东芯的DDR3(L)产品具备高传输速率以及低工作电压。可提供1.5V/1.35V两种电压模式,具有标准SSTL接口、8n-bit prefetch DDR架构和8个内部bank的DDR3 SDRAM,是主流的内存产品。在网络通信,消费电子,智能终端,物联网等几乎所有电子产品领域都有广泛应用。

Dosilicon's DDR3 (L) has high transmission rate and low working voltage. DDR3 SDRAM comes in two voltage modes (1.5V / 1.35V), standard SSTL interfaces, 8n-bit prefetch DDR structure and 8 internal banks. It is a mainstream memory product and widely used in all fields of electronic products, such as network communication, consumer electronics, intelligent terminal, IoT, etc.

规格: Specification:
电压/Voltage 1.8V
温度/Temperature -40℃ — 85℃
容量/Density 1Gb/2Gb/4Gb Flash
512Mb/1Gb/2Gb/4Gb LPDDR
封装/Package FBGA 130,FBGA 162
速度/Speed Flash 30ns,45ns LPDDR1 200MHz
LPDDR2 400MHz,533MHz
线宽/Width Flash *8/*16 LPDDR1 *16
LPDDR2 *16/*32

MCP

东芯MCP系列产品具有NAND Flash和DDR多种容量组合,Flash和DDR均为低电压的设计,核心电压1.8V可满足目前移动互联网和物联网对低功耗的需求。其中DDR包含LPDDR1/LPDDR2两种规格使其选择更加灵活丰富。MCP可将Flash和DDR合二为一进行封装,简化走线设计,节省组装空间,高效集成电路,提高产品稳定性。

Dosilicon's MCP series has a variety of capacity combinations of NAND Flash and DDR. Both Flash and DDR are designed with low voltage. The core voltage 1.8V meets the low power consumption demand of mobile Internet and IoT. Among them, DDR includes different specifications, i.e., LPDDR1 / LPDDR2, which offer flexible combinations. MCP combines Flash with DDR in one package, which integrates circuit effectively and improves the product stability.


规格: Specification:
电压/Voltage LPDDR1 1.8V LPDDR2 1.8V/1.2V
温度/Temperature -40℃ — 85℃
容量/Density LPDDR1 128Mb/256Mb/512Mb/1Gb/2Gb
LPDDR2 1Gb/2Gb/4Gb
封装/Package LPDDR1 FBGA 60,FBGA 90,
LPDDR2 FBGA 134
速度/Speed LPDDR1 166MHz 200MHz
LPDDR2 400MHz 533MHz
线宽/Width LPDDR1 *16/*32
LPDDR2 *16/*32

LPDDR Series

东芯LPDDR系列产品具有LPDDR1及LPDDR2两个系列,最大时钟频率可达533MHz。 LPDDR1的核心电压与IO电压均低至1.8V,而LPDDR2的VDDCA/VDDQ更低至1.2V,因此非常适合在移动互联网中类似智能终端,LPDDR系列产品将广泛应用于可穿戴/遥控设备等便携式产品。

Dosilicon's LPDDR has several products in two series, i.e., LPDDR1 and LPDDR2. The maximum clock rate of LPDDR series is 533MHz. The core voltage and IO voltage of LPDDR1 is as low as 1.8V, while the VDDCA / VDDQ of LPDDR2 can even go down to 1.2V, so they are very suitable for similar smart terminals on the Internet; with consideration to the market demand, Dosilicon will apply its LPDDR product extensively to wearable/remote devices and other portable products.

type Part Number Density Voltage Speed(MHz/CLK) Temp. Range PKG Type Datasheet

SPI NAND

DS35M12B-ID

512Mb

1.8V

83MHz

-40℃~85℃

WSON 6x5

Dev

DS35M12B-IB

WSON 8x6

DS35M1GA-IB

1Gb

104MHz

WSON 8x6

DS35M1GA-IW

KGD

contact us

DS35M1GB-ID

83MHz

WSON 6x5

Dev

DS35M1GB-IB

WSON 8x6

DS35Q1GA-IB

3.3V

104MHz

WSON 8x6

DS35Q1GA-IW

KGD

contact us

DS35Q1GB-IB

WSON 8x6

DS35M2GA-IB

2Gb

1.8V

WSON 8x6

DS35M2GA-IC

BGA 24

DS35M2GA-IW

KGD

contact us

DS35M2GB-IB

83MHz

WSON 8x6

DS35Q2GA-IB

3.3V

104MHz

WSON 8x6

DS35Q2GA-IC

BGA 24

DS35Q2GA-IW

KGD

contact us

DS35Q2GB-IB

WSON 8x6

DS35Q2GA-A2B

-40℃~105℃

WSON 8x6 Contact us

DS35Q2GA-A2E

BGA 24(5X5-1)

Contact us

DS35M4GM-IB

4Gb

1.8V

83MHz

-40℃~85℃

WSON 8x6

DS35Q4GM-IB

3.3V

104MHz

WSON 8x6

type Part Number Density Voltage Speed(MHz/CLK) Temp. Range PKG Type Datasheet

PPI NAND

FMND1G08S3D-IA

1Gb

1.8V

45ns

-40℃~85℃

TSOP 48(12*20mm)

FMND1G08S3D-ID

VFBGA 63(9*11mm)

FMND1G08S3D-IF

VFBGA 67(6.5*8mm)

FMND1G08U3D-IA

3.3V

25ns

TSOP 48(12*20mm)

FMND1G08U3D-ID

VFBGA 63(9*11mm)

FMND1G08U3D-IF

VFBGA 67(6.5*8mm)

FMND1G08U3D-JA

-40℃~105℃

TSOP 48(12*20mm)

FMND2G08S3D-IA

2Gb

1.8V

45ns

-40℃~85℃

TSOP 48(12*20mm)

FMND2G08S3D-ID

VFBGA 63(9*11mm)

FMND2G08S3D-IF

VFBGA 67(6.5*8mm)

DSND2G08S3E-IA

TSOP 48(12*20mm)

Dev

DSND2G08S3E-ID

VFBGA 63(9*11mm)

Dev

FMND2G08U3D-IA

3.3V

25ns

TSOP 48(12*20mm)

FMND2G08U3D-ID

VFBGA 63(9*11mm)

FMND2G08U3D-IF

VFBGA 67(6.5*8mm)

DSND2G08U3E-IA

TSOP 48(12*20mm)

Dev

FMND4G08S3B-ID

4Gb

1.8V

30ns

VFBGA 63(9*11mm)

FMND4G08S3C-ID

VFBGA 63(9*11mm)

FMND4G08S3B-IA

TSOP 48(12*20mm)

FMND4G08S3C-IA

TSOP 48(12*20mm)

FMND4G08S3F-ID

VFBGA 63(9*11mm)

DSND4G08S3C-ID

45ns

VFBGA 63(9*11mm)

FMND4G08U3B-ID

3.3V

20ns

VFBGA 63(9*11mm)

FMND4G08U3C-ID

VFBGA 63(9*11mm)

FMND4G08U3B-IA

TSOP 48(12*20mm)

FMND4G08U3C-IA

TSOP 48(12*20mm)

DSND4G08U3C-IA

25ns

TSOP 48(12*20mm)

DSND8G08S3M-ID

8Gb

1.8V

30ns

VFBGA 63(9*11mm)

DSND8G08S3N-ID

VFBGA 63(9*11mm)

DSND8G08S3F-ID VFBGA 63(9*11mm) Contact us

DSND8G08U3N-IA

3.3V

20ns

TSOP 48(12*20mm)

DSND8G08S3M-JD

1.8V

45ns

-40℃~105℃

VFBGA 63(9*11mm)

type Part Number Density Voltage Speed(MHz/CLK) Temp. Range PKG Type Datasheet

SPI NOR

FM25M32B-1AIB1

32Mb

1.8V

104MHz

-40℃~85℃

8pin 208mil SOP

FM25M32B-1AIB4

8 contact 6x5 WSON

FM25M64C-1AIB1

64Mb

1.8V

8pin 208mil SOP

FM25M64C-1AIB4

8 contact 6x5 WSON

FM25M64C-1AIB7

8 pin VSOP

FM25M64C-1AIBP

WLCSP

FM25M64C-1AIBW

KGD

contact us

FM25M64C-13IBP

133MHz

WLCSP

FM25Q64A-1AIA4

3.3V

104MHz

8 contact 6x5 WSON

FM25Q64A-1AIAW

KGD

contact us

FM25M4AA-1AIB1

128Mb

1.8V

104MHz

8 pin 208mil SOP

FM25M4AA-1AIB4

8 contact 6x5 WSON

FM25M4AA-XXXXX

FM25M4AA-1AIB7

8 pin VSOP

FM25M4AA-1AIBP

WLCSP

FM25M4AA-1AIBW

KGD

contact us

FM25M4AA-13IBP

133MHz

WLCSP

DS25M4AB-1AIB1

104MHz

8 pin 208mil SOP

DS25M4AB-1AIB4

8 contact 6x5 WSON

DS25M4AB-1AIBP

WLCSP

DS25M4AB-1AIBW

KGD

contact us

DS25M4BA-1AIB1

256Mb

8 pin 208mil SOP

DS25M4BA-1AIB4

8 contact 6x5 WSON

DS25M4BA-1AIBW

KGD

contact us

DS25M4CA-13JB2

512Mb

133MHz

-40℃~105℃

16 pin 300mil SOP

Dev

type Part Number Density Voltage Speed(MHz/CLK) Temp. Range PKG Type Datasheet

DDR3(L)

FM38D08SAA-8KFD

1Gb

1.5V

800MHz

0℃~95℃

FBGA 78(7.5*11*1.2mm)

FM38D16SAB-8KFD

1.5V

800MHz

FBGA 96(7.5*13*1.2mm)

FM38D16SAB-8KGD

1.35V/1.5V

800MHz

FBGA 96(7.5*13*1.2mm)

DS38E16SBB-8KFB

2Gb

1.5V

800MHz

-40℃~95℃

FBGA 96(7.5*13*1.2mm)

DS38E16SBB-9MFB

1.5V

933MHz

FBGA 96(7.5*13*1.2mm)

FM38E16SAB-9MGD

1.35V/1.5V

933MHz

0℃~95℃

FBGA 96(7.5*13.5*1.2mm)

FM38F16SAD-8KGD

4Gb

1.35V/1.5V

800MHz

FBGA 96(9*13.5*1.2mm)

FM38F16SAD-9MFD

1.5V

933MHz

FBGA 96(9*13.5*1.2mm)

FM38F16SBB-8KGD

1.35V/1.5V

800MHz

FBGA 96(7.5*13.5*1.2mm)

FM38F16SBB-9MGD

1.35V/1.5V

933MHz

FBGA 96(7.5*13.5*1.2mm)

PSRAM DSG2586AA-L500E 256Mb 1.8V 200MHz -25℃~85℃ WLCSP 24Ball Contact us
DSG2586AA-F500E FBGA 24Ball
Type Part Number NAND DRAM Temp.Range PKG Type Datasheet
Density Org Voltage Density Org Type Speed

MCP

FMN1SD5SBB-50IA

1Gb

x16

1.8V

512Mb

x16

LPDDR1

200MHz

-40℃~85℃

FBGA 130(8x9x1.0mm)

FMN1ET1TCB-25IH

1Gb

x8

1.8V

1Gb

x32

LPDDR2

400MHz

FBGA 162(8x10.5x1.0mm)

FMN2ET1TCD-25IH

2Gb

x8

1.8V

1Gb

x32

LPDDR2

400MHz

FBGA 162(8x10.5x1.0mm)

FMN2ET2SCD-25IH

2Gb

x8

1.8V

2Gb

X16

LPDDR2

400MHz

FBGA 162(8x10.5x1.0mm)

FMN2ET2TCD-25IH

2Gb

x8

1.8V

2Gb

X32

LPDDR2

400MHz

FBGA 162(8x10.5x1.0mm)

FMN4ET2TCB-25IH

4Gb

x8

1.8V

2Gb

x32

LPDDR2

400MHz

FBGA 162(8x10.5x1.0mm)

FMN4ET4DCF-25IH

4Gb

x8

1.8V

4Gb

x32

LPDDR2

400MHz

FBGA 162(8x10.5x1.1mm)

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