| 规格： | Specification: |
| 电压/Voltage | 1.8V，3.3V |
| 温度/Temperature | -40℃ — 85℃ / 105℃ |
| 容量/Density | 512Mb/1Gb / 2Gb / 4Gb |
| 封装/Package | WSON 8*6，BGA 24 |
| 速度/Speed | 83MHz，104MHz |
单芯片设计的串行通信方案，引脚少、封装尺寸小，且在同一颗粒上集成了存储阵列和控制器 ，并带有内部ECC模块，使其在满足数据传输效率的同时，既节约了空间，又提升了稳定性。产品现拥有38nm及2xnm的成熟工艺制程，未来将继续研发1xnm先进工艺制程。产品可提供3.3V /1.8V两种电压，具备WSON、BGA多种封装形式，不仅能满足常规应用场景，也使其在目前日益普及的由电池驱动的移动互联网及物联网设备中保持低功耗，有效延长设备的待机时间，也更灵活地适用于不同应用场景。目前，东芯半导体的SPI NAND Flash 已在第七届中国电子信息博览会中获得创新奖及2019年度最佳国产存储芯片产品奖。
Dosilicon's SPI NAND Flash is a serial peripheral interface SLC NAND Flash which the memory array and controller are integrated on one cell, with an internal ECC module. It not only offers satisfactory data transmission efficiency, but also saves space and enhances stability. It now incorporates 38 nm and 2x nm process technology, and will keep developing 1x nm process in the future. SPI NAND Flash is suitable for two voltages, and comprises several packages, which are applicable to varied application scenarios. Dosilicon's SPI NAND Flash won the Innovation Award at the 7th China Electronic Information Expo and the Best Domestic Memory Chip Award 2019.
| 规格： | Specification: |
| 电压/Voltage | 1.8V，3.3V |
| 温度/Temperature | -40℃—85℃/105℃ |
| 容量/Density | 1Gb / 2Gb / 4Gb/ 8Gb |
| 封装/Package | TSOP48，VFBGA63， VFBGA67 |
| 速度/Speed | 20ns/25ns，30ns/45ns |
| 线宽/Width | *8/ *16 |
兼容传统的并行接口标准，高可靠性。可提供容量从1Gb到8Gb， 3.3V/1.8V两种电压，多种封装方式的产品，以满足不同应用场景。在网络通信，智能音箱，安防监控，机顶盒等领域中广泛应用。
Dosilicon's PPI NAND Flash is designed with traditional parallel peripheral interface with high reliability. It provides capacities from 1Gb to 8Gb, two voltages (3.3V / 1.8V) and different package types compatible with various application scenarios. It is widely used in many fields such as network communication, AI speaker, security monitoring, STB, etc
| 规格： | Specification: |
| 电压/Voltage | 1.8V，3.3V |
| 温度/Temperature | -40℃ — 85℃ — 105℃ |
| 容量/Density | 32Mb/64Mb/128Mb/256Mb/512Mb |
| 封装/Package | SOP,WSON,VSOP,BGA,WLCSP |
| 速度/Speed | 104MHz/133MHz |
可提供通用SPI接口、不同规格的NOR Flash，容量从32Mb到512Mb，3.3V/1.8V两种电压，支持Single/Dual/Quad SPI和QPI四种指令模式、DTR传输模式和多种封装方式。产品专注在中小容量，可广泛应用于各种应用场景。
Dosilicon's SPI NOR Flash is of different specifications with universal SPI interfaces, which has capacities from 32 Mb to 512 Mb, two voltages (3.3V / 1.8V), Single / Dual / Quad SPI /QPI instruction modes, DTR transmission mode and several types of package. It focuses on medium and small capacity, which is suitable for different application scenarios.
| 规格： | Specification: |
| 电压/Voltage | 1.5V，1.35V |
| 温度/Temperature | 0℃/-40℃ — 95℃ |
| 容量/Density | 1Gb / 2Gb / 4Gb |
| 封装/Package | FBGA 78，FBGA 96 |
| 速度/Speed | 800MHz，933MHz |
| 线宽/Width | *8/ *16 |
东芯的DDR3（L）产品具备高传输速率以及低工作电压。可提供1.5V/1.35V两种电压模式，具有标准SSTL接口、8n-bit prefetch DDR架构和8个内部bank的DDR3 SDRAM，是主流的内存产品。在网络通信，消费电子，智能终端，物联网等几乎所有电子产品领域都有广泛应用。
Dosilicon's DDR3 (L) has high transmission rate and low working voltage. DDR3 SDRAM comes in two voltage modes (1.5V / 1.35V), standard SSTL interfaces, 8n-bit prefetch DDR structure and 8 internal banks. It is a mainstream memory product and widely used in all fields of electronic products, such as network communication, consumer electronics, intelligent terminal, IoT, etc.
| 规格： | Specification: |
| 电压/Voltage | 1.8V |
| 温度/Temperature | -40℃ — 85℃ |
| 容量/Density | 1Gb/2Gb/4Gb Flash |
| 512Mb/1Gb/2Gb/4Gb LPDDR | |
| 封装/Package | FBGA 130，FBGA 162 |
| 速度/Speed | Flash 30ns，45ns LPDDR1 200MHz |
| LPDDR2 400MHz，533MHz | |
| 线宽/Width | Flash *8/*16 LPDDR1 *16 |
| LPDDR2 *16/*32 |
东芯MCP系列产品具有NAND Flash和DDR多种容量组合，Flash和DDR均为低电压的设计，核心电压1.8V可满足目前移动互联网和物联网对低功耗的需求。其中DDR包含LPDDR1/LPDDR2两种规格使其选择更加灵活丰富。MCP可将Flash和DDR合二为一进行封装，简化走线设计，节省组装空间，高效集成电路，提高产品稳定性。
Dosilicon's MCP series has a variety of capacity combinations of NAND Flash and DDR. Both Flash and DDR are designed with low voltage. The core voltage 1.8V meets the low power consumption demand of mobile Internet and IoT. Among them, DDR includes different specifications, i.e., LPDDR1 / LPDDR2, which offer flexible combinations. MCP combines Flash with DDR in one package, which integrates circuit effectively and improves the product stability.
| 规格： | Specification: |
| 电压/Voltage | LPDDR1 1.8V LPDDR2 1.8V/1.2V |
| 温度/Temperature | -40℃ — 85℃ |
| 容量/Density | LPDDR1 128Mb/256Mb/512Mb/1Gb/2Gb |
| LPDDR2 1Gb/2Gb/4Gb | |
| 封装/Package | LPDDR1 FBGA 60，FBGA 90， |
| LPDDR2 FBGA 134 | |
| 速度/Speed | LPDDR1 166MHz 200MHz |
| LPDDR2 400MHz 533MHz | |
| 线宽/Width | LPDDR1 *16/*32 |
| LPDDR2 *16/*32 |
东芯LPDDR系列产品具有LPDDR1及LPDDR2两个系列，最大时钟频率可达533MHz。 LPDDR1的核心电压与IO电压均低至1.8V，而LPDDR2的VDDCA/VDDQ更低至1.2V，因此非常适合在移动互联网中类似智能终端，LPDDR系列产品将广泛应用于可穿戴/遥控设备等便携式产品。
Dosilicon's LPDDR has several products in two series, i.e., LPDDR1 and LPDDR2. The maximum clock rate of LPDDR series is 533MHz. The core voltage and IO voltage of LPDDR1 is as low as 1.8V, while the VDDCA / VDDQ of LPDDR2 can even go down to 1.2V, so they are very suitable for similar smart terminals on the Internet; with consideration to the market demand, Dosilicon will apply its LPDDR product extensively to wearable/remote devices and other portable products.
| type | Part Number | Density | Voltage | Speed(MHz/CLK) | Temp. Range | PKG Type | Datasheet |
|---|---|---|---|---|---|---|---|
SPI NAND |
DS35M12B-ID |
512Mb |
1.8V |
83MHz |
-40℃~85℃ |
WSON 6x5 |
Dev |
DS35M12B-IB |
WSON 8x6 |
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DS35M1GA-IB |
1Gb |
104MHz |
WSON 8x6 |
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DS35M1GA-IW |
KGD |
contact us |
|||||
DS35M1GB-ID |
83MHz |
WSON 6x5 |
Dev |
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DS35M1GB-IB |
WSON 8x6 |
|
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DS35Q1GA-IB |
3.3V |
104MHz |
WSON 8x6 |
|
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DS35Q1GA-IW |
KGD |
contact us |
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DS35Q1GB-IB |
WSON 8x6 |
|
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DS35M2GA-IB |
2Gb |
1.8V |
WSON 8x6 |
|
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DS35M2GA-IC |
BGA 24 |
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DS35M2GA-IW |
KGD |
contact us |
|||||
DS35M2GB-IB |
83MHz |
WSON 8x6 |
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DS35Q2GA-IB |
3.3V |
104MHz |
WSON 8x6 |
|
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DS35Q2GA-IC |
BGA 24 |
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DS35Q2GA-IW |
KGD |
contact us |
|||||
DS35Q2GB-IB |
WSON 8x6 |
|
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| DS35Q2GA-A2B | -40℃~105℃ |
WSON 8x6 | Contact us | ||||
DS35Q2GA-A2E |
BGA 24(5X5-1) |
Contact us |
|||||
DS35M4GM-IB |
4Gb |
1.8V |
83MHz |
-40℃~85℃ |
WSON 8x6 |
|
|
DS35Q4GM-IB |
3.3V |
104MHz |
WSON 8x6 |
|
| type | Part Number | Density | Voltage | Speed(MHz/CLK) | Temp. Range | PKG Type | Datasheet |
|---|---|---|---|---|---|---|---|
PPI NAND |
FMND1G08S3D-IA |
1Gb |
1.8V |
45ns |
-40℃~85℃ |
TSOP 48(12*20mm) |
|
FMND1G08S3D-ID |
VFBGA 63(9*11mm) |
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FMND1G08S3D-IF |
VFBGA 67(6.5*8mm) |
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FMND1G08U3D-IA |
3.3V |
25ns |
TSOP 48(12*20mm) |
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FMND1G08U3D-ID |
VFBGA 63(9*11mm) |
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FMND1G08U3D-IF |
VFBGA 67(6.5*8mm) |
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FMND1G08U3D-JA |
-40℃~105℃ |
TSOP 48(12*20mm) |
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FMND2G08S3D-IA |
2Gb |
1.8V |
45ns |
-40℃~85℃ |
TSOP 48(12*20mm) |
|
|
FMND2G08S3D-ID |
VFBGA 63(9*11mm) |
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FMND2G08S3D-IF |
VFBGA 67(6.5*8mm) |
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DSND2G08S3E-IA |
TSOP 48(12*20mm) |
Dev |
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DSND2G08S3E-ID |
VFBGA 63(9*11mm) |
Dev |
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FMND2G08U3D-IA |
3.3V |
25ns |
TSOP 48(12*20mm) |
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FMND2G08U3D-ID |
VFBGA 63(9*11mm) |
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FMND2G08U3D-IF |
VFBGA 67(6.5*8mm) |
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DSND2G08U3E-IA |
TSOP 48(12*20mm) |
Dev |
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FMND4G08S3B-ID |
4Gb |
1.8V |
30ns |
VFBGA 63(9*11mm) |
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FMND4G08S3C-ID |
VFBGA 63(9*11mm) |
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FMND4G08S3B-IA |
TSOP 48(12*20mm) |
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FMND4G08S3C-IA |
TSOP 48(12*20mm) |
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FMND4G08S3F-ID |
VFBGA 63(9*11mm) |
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DSND4G08S3C-ID |
45ns |
VFBGA 63(9*11mm) |
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FMND4G08U3B-ID |
3.3V |
20ns |
VFBGA 63(9*11mm) |
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FMND4G08U3C-ID |
VFBGA 63(9*11mm) |
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FMND4G08U3B-IA |
TSOP 48(12*20mm) |
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FMND4G08U3C-IA |
TSOP 48(12*20mm) |
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DSND4G08U3C-IA |
25ns |
TSOP 48(12*20mm) |
|
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DSND8G08S3M-ID |
8Gb |
1.8V |
30ns |
VFBGA 63(9*11mm) |
|
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DSND8G08S3N-ID |
VFBGA 63(9*11mm) |
|
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| DSND8G08S3F-ID | VFBGA 63(9*11mm) | Contact us | |||||
DSND8G08U3N-IA |
3.3V |
20ns |
TSOP 48(12*20mm) |
|
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DSND8G08S3M-JD |
1.8V |
45ns |
-40℃~105℃ |
VFBGA 63(9*11mm) |
|
| type | Part Number | Density | Voltage | Speed(MHz/CLK) | Temp. Range | PKG Type | Datasheet |
|---|---|---|---|---|---|---|---|
SPI NOR |
FM25M32B-1AIB1 |
32Mb |
1.8V |
104MHz |
-40℃~85℃ |
8pin 208mil SOP |
|
FM25M32B-1AIB4 |
8 contact 6x5 WSON |
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FM25M64C-1AIB1 |
64Mb |
1.8V |
8pin 208mil SOP |
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FM25M64C-1AIB4 |
8 contact 6x5 WSON |
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FM25M64C-1AIB7 |
8 pin VSOP |
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FM25M64C-1AIBP |
WLCSP |
|
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FM25M64C-1AIBW |
KGD |
contact us |
|||||
FM25M64C-13IBP |
133MHz |
WLCSP |
|
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FM25Q64A-1AIA4 |
3.3V |
104MHz |
8 contact 6x5 WSON |
|
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FM25Q64A-1AIAW |
KGD |
contact us |
|||||
FM25M4AA-1AIB1 |
128Mb |
1.8V |
104MHz |
8 pin 208mil SOP |
|
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FM25M4AA-1AIB4 |
8 contact 6x5 WSON |
FM25M4AA-XXXXX |
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FM25M4AA-1AIB7 |
8 pin VSOP |
|
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FM25M4AA-1AIBP |
WLCSP |
|
|||||
FM25M4AA-1AIBW |
KGD |
contact us |
|||||
FM25M4AA-13IBP |
133MHz |
WLCSP |
|
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DS25M4AB-1AIB1 |
104MHz |
8 pin 208mil SOP |
|
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DS25M4AB-1AIB4 |
8 contact 6x5 WSON |
|
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DS25M4AB-1AIBP |
WLCSP |
|
|||||
DS25M4AB-1AIBW |
KGD |
contact us |
|||||
DS25M4BA-1AIB1 |
256Mb |
8 pin 208mil SOP |
|
||||
DS25M4BA-1AIB4 |
8 contact 6x5 WSON |
|
|||||
DS25M4BA-1AIBW |
KGD |
contact us |
|||||
DS25M4CA-13JB2 |
512Mb |
133MHz |
-40℃~105℃ |
16 pin 300mil SOP |
Dev |
| type | Part Number | Density | Voltage | Speed(MHz/CLK) | Temp. Range | PKG Type | Datasheet |
|---|---|---|---|---|---|---|---|
DDR3(L) |
FM38D08SAA-8KFD |
1Gb |
1.5V |
800MHz |
0℃~95℃ |
FBGA 78(7.5*11*1.2mm) |
|
FM38D16SAB-8KFD |
1.5V |
800MHz |
FBGA 96(7.5*13*1.2mm) |
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FM38D16SAB-8KGD |
1.35V/1.5V |
800MHz |
FBGA 96(7.5*13*1.2mm) |
|
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DS38E16SBB-8KFB |
2Gb |
1.5V |
800MHz |
-40℃~95℃ |
FBGA 96(7.5*13*1.2mm) |
|
|
DS38E16SBB-9MFB |
1.5V |
933MHz |
FBGA 96(7.5*13*1.2mm) |
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FM38E16SAB-9MGD |
1.35V/1.5V |
933MHz |
0℃~95℃ |
FBGA 96(7.5*13.5*1.2mm) |
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FM38F16SAD-8KGD |
4Gb |
1.35V/1.5V |
800MHz |
FBGA 96(9*13.5*1.2mm) |
|
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FM38F16SAD-9MFD |
1.5V |
933MHz |
FBGA 96(9*13.5*1.2mm) |
||||
FM38F16SBB-8KGD |
1.35V/1.5V |
800MHz |
FBGA 96(7.5*13.5*1.2mm) |
|
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FM38F16SBB-9MGD |
1.35V/1.5V |
933MHz |
FBGA 96(7.5*13.5*1.2mm) |
||||
| PSRAM | DSG2586AA-L500E | 256Mb | 1.8V | 200MHz | -25℃~85℃ | WLCSP 24Ball | Contact us |
| DSG2586AA-F500E | FBGA 24Ball |
| Type | Part Number | NAND | DRAM | Temp.Range | PKG Type | Datasheet | |||||
| Density | Org | Voltage | Density | Org | Type | Speed | |||||
MCP |
FMN1SD5SBB-50IA |
1Gb |
x16 |
1.8V |
512Mb |
x16 |
LPDDR1 |
200MHz |
-40℃~85℃ |
FBGA 130(8x9x1.0mm) |
|
FMN1ET1TCB-25IH |
1Gb |
x8 |
1.8V |
1Gb |
x32 |
LPDDR2 |
400MHz |
FBGA 162(8x10.5x1.0mm) |
|
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FMN2ET1TCD-25IH |
2Gb |
x8 |
1.8V |
1Gb |
x32 |
LPDDR2 |
400MHz |
FBGA 162(8x10.5x1.0mm) |
|
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FMN2ET2SCD-25IH |
2Gb |
x8 |
1.8V |
2Gb |
X16 |
LPDDR2 |
400MHz |
FBGA 162(8x10.5x1.0mm) |
|
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FMN2ET2TCD-25IH |
2Gb |
x8 |
1.8V |
2Gb |
X32 |
LPDDR2 |
400MHz |
FBGA 162(8x10.5x1.0mm) |
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FMN4ET2TCB-25IH |
4Gb |
x8 |
1.8V |
2Gb |
x32 |
LPDDR2 |
400MHz |
FBGA 162(8x10.5x1.0mm) |
|
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FMN4ET4DCF-25IH |
4Gb |
x8 |
1.8V |
4Gb |
x32 |
LPDDR2 |
400MHz |
FBGA 162(8x10.5x1.1mm) |
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