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规格: Specification:
电压/Voltage 1.8V
温度/Temperature -40℃ — 85℃
容量/Density Flash 1Gb/2Gb/4Gb
LPDDR 512Mb/1Gb/2Gb/4Gb
封装/Package FBGA 130,FBGA 162
速度/Speed Flash 30ns/45ns
LPDDR1 200MHz
LPDDR2 400MHz/533MHz
线宽/Width Flash x8/x16
LPDDR1 X16
LPDDR2 x16/x32

MCP

东芯MCP系列产品具有NAND Flash和DDR多种容量组合,Flash和DDR均为低电压的设计,核心电压1.8V可满足目前移动互联网和物联网对低功耗的需求。其中DDR包含LPDDR1/LPDDR2两种规格使其选择更加灵活丰富。MCP可将Flash和DDR合二为一进行封装,简化走线设计,节省组装空间,高效集成电路,提高产品稳定性。

Dosilicon's MCP series has a variety of capacity combinations of NAND Flash and DDR. Both Flash and DDR are designed with low voltage. The core voltage 1.8V meets the low power consumption demand of mobile Internet and IoT. Among them, DDR includes different specifications, i.e., LPDDR1 / LPDDR2, which offer flexible combinations. MCP combines Flash with DDR in one package, which integrates circuit effectively and improves the product stability.


Type

Part Number

NAND

DRAM

Temp. Range

PKG Type

Datasheet

Density

Org

Voltage

Density

Or25g

Type

Speed

MCP

FMN1SD5SBB-50IA

1Gb

x16

1.8V

512Mb

x16

LPDDR1

200MHz

-40℃~85℃

FBGA 130(8x9x1.0mm)

FMN1ET1TCB-25IH

1Gb

x8

1.8V

1Gb

x32

LPDDR2

400MHz

FBGA 162(8x10.5x1.0mm)

FMN2ET1TCD-25IH

2Gb

x8

1.8V

1Gb

x32

LPDDR2

400MHz

FBGA 162(8x10.5x1.0mm)

FMN2ET2SCD-25IH

2Gb

x8

1.8V

2Gb

X16

LPDDR2

400MHz

FBGA 162(8x10.5x1.0mm)

FMN2ET2TCD-25IH

2Gb

x8

1.8V

2Gb

X32

LPDDR2

400MHz

FBGA 162(8x10.5x1.0mm)

FMN4ET2TCB-25IH

4Gb

x8

1.8V

2Gb

x32

LPDDR2

400MHz

FBGA 162(8x10.5x1.0mm)

FMN4ET2TCF-25IH 4Gb x8 1.8V 2Gb x32 LPDDR2 400MHz FBGA 162(8x10.5x1.0mm)

FMN4ET4DCF-25IH

4Gb

x8

1.8V

4Gb

x32

LPDDR2

400MHz

FBGA 162(8x10.5x1.1mm)

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