| 规格： | Specification: |
| 电压/Voltage | 1.8V |
| 温度/Temperature | -40℃ ~ 85℃ |
| 容量/Density | Flash 1Gb/2Gb/4Gb |
| LPDDR 512Mb/1Gb/2Gb/4Gb | |
| 封装/Package | FBGA 130，FBGA 162 |
| 速度/Speed |
Flash 30ns/45ns LPDDR1 200MHz LPDDR2 400MHz/533MHz |
| 线宽/Width | Flash x8/x16 LPDDR1 X16 LPDDR2 x16/x32 |
东芯MCP系列产品具有NAND Flash和DDR多种容量组合，Flash和DDR均为低电压的设计，核心电压1.8V可满足目前移动互联网和物联网对低功耗的需求。其中DDR包含LPDDR1/LPDDR2两种规格使其选择更加灵活丰富。MCP可将Flash和DDR合二为一进行封装，简化走线设计，节省组装空间，高效集成电路，提高产品稳定性。
Dosilicon's MCP series has a variety of capacity combinations of NAND Flash and DDR. Both Flash and DDR are designed with low voltage. The core voltage 1.8V meets the low power consumption demand of mobile Internet and IoT. Among them, DDR includes different specifications, i.e., LPDDR1 / LPDDR2, which offer flexible combinations. MCP combines Flash with DDR in one package, which integrates circuit effectively and improves the product stability.
|
Type |
Part Number |
NAND |
DRAM |
Temp. Range |
PKG Type |
Datasheet |
|||||
|
Density |
Org |
Voltage |
Density |
Or25g |
Type |
Speed |
|||||
|
MCP |
FMN1SD5SBB-50IA |
1Gb |
x16 |
1.8V |
512Mb |
x16 |
LPDDR1 |
200MHz |
-40℃~85℃ |
FBGA 130(8x9x1.0mm) |
|
|
FMN1ET1TCB-25IH |
1Gb |
x8 |
1.8V |
1Gb |
x32 |
LPDDR2 |
400MHz |
FBGA 162(8x10.5x1.0mm) |
|
||
|
FMN2ET1TCD-25IH |
2Gb |
x8 |
1.8V |
1Gb |
x32 |
LPDDR2 |
400MHz |
FBGA 162(8x10.5x1.0mm) |
|
||
|
FMN2ET2SCD-25IH |
2Gb |
x8 |
1.8V |
2Gb |
X16 |
LPDDR2 |
400MHz |
FBGA 162(8x10.5x1.0mm) |
|
||
|
FMN2ET2TCD-25IH |
2Gb |
x8 |
1.8V |
2Gb |
X32 |
LPDDR2 |
400MHz |
FBGA 162(8x10.5x1.0mm) |
|
||
|
FMN4ET2TCB-25IH |
4Gb |
x8 |
1.8V |
2Gb |
x32 |
LPDDR2 |
400MHz |
FBGA 162(8x10.5x1.0mm) |
|
||
| FMN4ET2TCF-25IH | 4Gb | x8 | 1.8V | 2Gb | x32 | LPDDR2 | 400MHz | FBGA 162(8x10.5x1.0mm) |
|
||
|
FMN4ET4DCF-25IH |
4Gb |
x8 |
1.8V |
4Gb |
x32 |
LPDDR2 |
400MHz |
FBGA 162(8x10.5x1.1mm) |
|
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